Imishini ebalulekile yamasu okuhlaziya i-microanalysis ihlanganisa: i-optical microscopy (OM), i-double-beam scanning electron microscopy (DB-FIB), scanning electron microscopy (SEM), kanye ne-transmission electron microscopy (TEM).Isihloko sanamuhla sizokwethula umgomo kanye nokusetshenziswa kwe-DB-FIB, sigxile emandleni esevisi ye-metrology yomsakazo nethelevishini i-DB-FIB kanye nokusetshenziswa kwe-DB-FIB ekuhlaziyweni kwe-semiconductor.
Yini i-DB-FIB
I-Dual-beam scanning electron microscope (DB-FIB) iyithuluzi elihlanganisa i-ion beam egxilile kanye ne-electron beam yokuskena kusibonakhulu esisodwa, futhi ifakwe izesekeli ezifana ne-gas injection system (GIS) kanye ne-nanomanipulator, ukuze kuzuzwe imisebenzi eminingi. njenge-etching, ukufakwa kwezinto ezibonakalayo, ukucutshungulwa kwe-micro kanye ne-nano.
Phakathi kwazo, i-focus ion beam (FIB) isheshisa i-ion beam ekhiqizwa umthombo we-ion we-liquid gallium (Ga) ion, bese igxila ebusweni besampula ukuze ikhiqize amasignali e-electron yesibili, futhi iqoqwe umtshina.Noma sebenzisa ugongolo lwe-ion lwamanje oluqinile ukuze ugcizelele indawo eyisampula yokucubungula okuncane ne-nano;Inhlanganisela ye-sputtering ebonakalayo kanye nokusabela kwegesi yamakhemikhali kungasetshenziswa futhi ukuze ukhethe ngokukhetha noma ukufaka izinsimbi nama-insulators.
Imisebenzi esemqoka kanye nokusetshenziswa kwe-DB-FIB
Imisebenzi esemqoka: ukucubungula kwesigaba esinqunyiwe, ukulungiswa kwesampula ye-TEM, ukunamathisela okukhethiwe noma okuthuthukisiwe, ukubekwa kwempahla yensimbi kanye nokubekwa kongqimba oluvikelayo.
Inkambu yohlelo lokusebenza: I-DB-FIB isetshenziswa kakhulu ezintweni zobumba, ama-polymers, izinto zensimbi, i-biology, i-semiconductor, i-geology kanye neminye imikhakha yocwaningo kanye nokuhlolwa komkhiqizo okuhlobene.Ikakhulukazi, ikhono le-DB-FIB eliyingqayizivele lokulungiselela isampula lokudluliswa kwamaphuzu angaguquki lilenza lingenakuthathelwa indawo kukhono lokuhlaziya ukwehluleka kwe-semiconductor.
Amandla wesevisi ye-GRGTEST DB-FIB
I-DB-FIB okwamanje ifakwe i-Shanghai IC Test and Analysis Laboratory iwuchungechunge lwe-Helios G5 lwe-Thermo Field, okuwuchungechunge oluthuthuke kakhulu lwe-Ga-FIB emakethe.Uchungechunge lungafinyelela izinqumo zokuthwebula ze-electron beam engaphansi kuka-1 nm, futhi luthuthukiswe kakhulu ngokuya ngokusebenza kwe-ion beam nokusebenza okuzenzakalelayo kunesizukulwane sangaphambilini semakroskopu yama-electron emigqa emibili.I-DB-FIB ifakwe ama-nanomanipulator, amasistimu omjovo wegesi (GIS) kanye ne-EDX ye-energy spectrum ukuze kuhlangatshezwane nezidingo eziyisisekelo nezithuthukisiwe zokuhlaziya ukwehluleka kwe-semiconductor.
Njengethuluzi elinamandla lokuhlaziya ukwehluleka kwempahla ebonakalayo ye-semiconductor, i-DB-FIB ingakwazi ukwenza umsebenzi we-fixed-cross-section machining ngokunemba kwe-nanometer.Ngesikhathi esifanayo sokucutshungulwa kwe-FIB, insimbi yokuskena ye-electron enokulungiswa kwe-nanometer ingasetshenziswa ukubuka i-microscopic morphology ye-cross-section futhi ihlaziye ukwakheka ngesikhathi sangempela.Ukufeza ukufakwa kwezinto ezihlukene zensimbi (i-tungsten, iplatinamu, njll.) kanye nezinto ezingezona ezensimbi (ikhabhoni, iSiO2);Izingcezu ze-TEM ezizacile kakhulu zingalungiswa endaweni egxilile, ezingahlangabezana nezidingo zokubhekwa kokucaca okuphezulu kakhulu ezingeni le-athomu.
Sizoqhubeka nokutshala imali ezintweni ezithuthukisiwe ze-electronic microanalysis, ngokuqhubekayo sithuthukise futhi sandise amakhono ahlobene nokuhlaziya ukwehluleka kwe-semiconductor, futhi sinikeze amakhasimende izixazululo ezinemininingwane neziphelele zokuhlaziya ukwehluleka.
Isikhathi sokuthumela: Apr-14-2024